Multilayered ion-implanted BARITT diodes with improved efficiency Academic Article uri icon


  • Based on the model suggested in an accompanying paper[1], diodes having the multilayered n + ipvn + structure have been fabricated from silicon material using ion implantation techniques. Systematic descriptions of their fabrication and evaluation are presented. Microwave CW oscillations at C-band (7.5 Ghz) have been observed in some of our devices. The measured maximum power output was in the range of 40 mw and the efficiency was 5%. The obtained efficiency is the best reported for any BARITT diode. This result indicatest hat the retarding field region in BARITT diodes may be used advantageously to provide a favorable phase delay between the injected current and the a.c. voltage and leads to improved efficiency BARITT oscillators. 1977.

published proceedings

  • Solid-State Electronics

author list (cited authors)

  • Eknoyan, O., Yang, E. S., & Sze, S. M.

citation count

  • 5

complete list of authors

  • Eknoyan, O||Yang, ES||Sze, SM

publication date

  • April 1977