Multilayered ion-implanted BARITT diodes with improved efficiency
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Based on the model suggested in an accompanying paper, diodes having the multilayered n + ipvn + structure have been fabricated from silicon material using ion implantation techniques. Systematic descriptions of their fabrication and evaluation are presented. Microwave CW oscillations at C-band (∼7.5 Ghz) have been observed in some of our devices. The measured maximum power output was in the range of 40 mw and the efficiency was ∼5%. The obtained efficiency is the best reported for any BARITT diode. This result indicatest hat the retarding field region in BARITT diodes may be used advantageously to provide a favorable phase delay between the injected current and the a.c. voltage and leads to improved efficiency BARITT oscillators. © 1977.
author list (cited authors)
Eknoyan, O., Yang, E. S., & Sze, S. M.