Electro-optic intensity modulators at λ=1.55 μm utilizing strain-optic effects in LiNbO3 Academic Article uri icon

abstract

  • Electro-optic intensity modulators at λ = 1.55 μm are produced in LiNbO3 substrates using strain-induced channel waveguides formed by magnetron deposition of a surface metal film and lift-off technology, The static strain resulting from thermal expansion mismatch between the substrate and the metal film that is caused by the plasma temperature during deposition induces a localized increase in the refractive index via the strain-optic effect. Modulation depth of 100% at a π-rad voltage of 16.1 V is demonstrated. Electro-optic modulation behaviours in channel waveguides fabricated using strain inducing surface metal film are compared to ones formed by thick SiO2 surface film. © 2001 Society of Photo-Optical Instrumentation Engineers.

author list (cited authors)

  • Jung, H. S., Eknoyan, O., & Taylor, H. F.

citation count

  • 2

publication date

  • August 2001