Electro-optic intensity modulators at lambda=1.55 mu m utilizing strain-optic effects in LiNbO3
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abstract
Electro-optic intensity modulators at = 1.55 m are produced in LiNbO3 substrates using strain-induced channel waveguides formed by magnetron deposition of a surface metal film and lift-off technology, The static strain resulting from thermal expansion mismatch between the substrate and the metal film that is caused by the plasma temperature during deposition induces a localized increase in the refractive index via the strain-optic effect. Modulation depth of 100% at a -rad voltage of 16.1 V is demonstrated. Electro-optic modulation behaviours in channel waveguides fabricated using strain inducing surface metal film are compared to ones formed by thick SiO2 surface film. 2001 Society of Photo-Optical Instrumentation Engineers.