HIGH TEMPERATURE GAP MESFET. Academic Article uri icon

abstract

  • GAP MESFET'S HAVE BEEN FABRICATED AND THE RESULTING DEVICESARE FUNCTIONAL AT TEMPERATURES OF UP TO 295 D. C. THE DEVICES FABRICATED HAVE W/L = 25/1 AND DEMONSTRATE A TRANSCONDUCTANCE OF 200 ″MU″ S. THIS VALUE OF TRANSCONDUCTANCE IS WITHIN5P OF THE PREDICTED VALUE.

author list (cited authors)

  • WEICHOLD, M. H., EKNOYAN, O., & KAO, Y. C.

publication date

  • January 1982