VERTICAL V-GROOVE JUNCTION FIELD EFFECT TRANSISTORS FOR POWER APPLICATIONS. Academic Article uri icon

abstract

  • The results of investigations performed on a new JFET structure are presented. The structure combines the features of both vertical channel and V-groove structures in a single device which is called the Vertical V-Groove Field-Effect Transistor or V**2FET. The attractive features of the V**2FET are twofold. (1) It takes advantage of V-shaped grooves to make the JFET gates; as such it introduces a nonuniform trapezoidal channel which provides higher channel conductance relative to parallel walled gate JFETs, consequently allowing larger current flow. (2) Because of the vertical channel arrangement, several devices can be monolithically integrated by simply interdigitating drains and gates, thus allowing further enhancement in current flow capability while utilizing smaller semiconductor material surface area relative to horizontal JFETs. Interdigitated n-channel V**2FETs have been fabricated taking advantage of ion implantation.

author list (cited authors)

  • Simpson, D., & Eknoyan, O.

publication date

  • January 1981