A GAP MESFET FOR HIGH-TEMPERATURE APPLICATIONS Academic Article

abstract

• A process for fabricating GaP metal semiconductor field effect transistors (MESFET's) capable of operating at temperatures of up to 295C has been developed. The characteristics of the fabricated devices suggest a need for tighter control and further research involving channel doping and thickness uniformity as well as drain and source durability. 1982 IEEE

authors

• Eknoyan, Ohannes
• Weichold, Mark

published proceedings

• IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY

author list (cited authors)

• WEICHOLD, M. H., EKNOYAN, O., & KAO, Y. C.

citation count

• 5

complete list of authors

• WEICHOLD, MH||EKNOYAN, O||KAO, YC

publication date

• December 1982

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• IEEE Transactions on Components, Hybrids and Manufacturing Technology  Journal

keywords

• 40 Engineering
• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1109/TCHMT.1982.1136001

start page

• 342

end page

• 344

volume

• 5

issue

• 4

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Ftchmt.1982.1136001