A GaP MESFET for High Temperature Applications Academic Article uri icon

abstract

  • A process for fabricating GaP metal semiconductor field effect transistors (MESFET's) capable of operating at temperatures of up to 295°C has been developed. The characteristics of the fabricated devices suggest a need for tighter control and further research involving channel doping and thickness uniformity as well as drain and source durability. © 1982 IEEE

author list (cited authors)

  • Weichold, M., Eknoyan, O., & Kao, Y.

citation count

  • 4

publication date

  • December 1982