A GaP MESFET for High Temperature Applications
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A process for fabricating GaP metal semiconductor field effect transistors (MESFET's) capable of operating at temperatures of up to 295°C has been developed. The characteristics of the fabricated devices suggest a need for tighter control and further research involving channel doping and thickness uniformity as well as drain and source durability. © 1982 IEEE
author list (cited authors)
Weichold, M., Eknoyan, O., & Kao, Y.