Electron and hole carrier mobilities for liquid phase epitaxially grown GaP in the temperature range 200–550 K
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Mobility data for GaP in the temperature range 200-550 K as a function of impurity concentration are presented. The data were determined from sheet Hall coefficient and resistivity measurements obtained using the van der Pauw method. The results are given for a wide range of concentrations ranging from unintentionally doped to degenerately doped conditions. The maximum values of the electron and hole mobilities at room temperature were found to be 160 and 135 cm2/Vs, respectively. The observed average temperature dependence of the mobility is T-1.7 for electrons and T-2.3 for holes.
author list (cited authors)
Kao, Y. C., & Eknoyan, O.