GaAs OHMIC CONTACTS FOR HIGH TEMPERATURE DEVICES. Academic Article uri icon

abstract

  • As a part of a program to develop high temperature compound semiconductor devices, four basic ohmic contact systems for n-type GaAs have been evaluated for contact resistance as a function of temperature (24-350 degree C) and time (at 300 degree C): Ni/AuGe; Ag/Si and Ag/Ni/Si; Al/Ge and Al/AlGe; and Au/Nb/Si and Pt/Nb/Si.

author list (cited authors)

  • Coquat, J. A., Palmer, D. W., Eknoyan, O., & Van der Hoeven, W. B.

publication date

  • January 1980