GaAs OHMIC CONTACTS FOR HIGH TEMPERATURE DEVICES. Academic Article

abstract

• As a part of a program to develop high temperature compound semiconductor devices, four basic ohmic contact systems for n-type GaAs have been evaluated for contact resistance as a function of temperature (24-350 degree C) and time (at 300 degree C): Ni/AuGe; Ag/Si and Ag/Ni/Si; Al/Ge and Al/AlGe; and Au/Nb/Si and Pt/Nb/Si.

authors

• Eknoyan, Ohannes

published proceedings

• Proceedings - Electronic Components and Technology Conference

author list (cited authors)

• Coquat, J. A., Palmer, D. W., Eknoyan, O., & Van der Hoeven, W. B.

complete list of authors

• Coquat, JA||Palmer, DW||Eknoyan, O||Van der Hoeven, WB

publication date

• January 1980

published in

• Electronic Components and Technology Conference  Journal

start page

• 55

end page

• 60