RESISTIVITY AND MOBILITY OF GAP AT 300-K Academic Article

abstract

• Resistivity and mobility data of GaP at 300 K are presented in a unified form as a function of impurity concentration for the first time. The data are determined from sheet Hall coefficient and resistivity measurements obtained using the van der Pauw method. The results are given over a wide range of concentrations ranging from unitentionally doped to degenerate conditions. The maximum values of the electron and hole mobility, n and p, are found to be 160 and 135 cm2/V's, respectively. Copyright 1983 by The Institute of Electrical and Electronics Engineers, Inc.

authors

• Eknoyan, Ohannes

published proceedings

• IEEE TRANSACTIONS ON ELECTRON DEVICES

author list (cited authors)

• KAO, Y. C., & EKNOYAN, O.

citation count

• 3

complete list of authors

• KAO, YC||EKNOYAN, O

publication date

• July 1983

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

keywords

• 40 Engineering
• 4009 Electronics, Sensors And Digital Hardware

Digital Object Identifier (DOI)

• 10.1109/T-ED.1983.21221

start page

• 855

end page

• 857

volume

• 30

issue

• 7

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Ft-ed.1983.21221