Resistivity and mobility of GaP at 300 K
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Resistivity and mobility data of GaP at 300 K are presented in a unified form as a function of impurity concentration for the first time. The data are determined from sheet Hall coefficient and resistivity measurements obtained using the van der Pauw method. The results are given over a wide range of concentrations ranging from unitentionally doped to degenerate conditions. The maximum values of the electron and hole mobility, μn and μp, are found to be 160 and 135 cm2/V's, respectively. Copyright © 1983 by The Institute of Electrical and Electronics Engineers, Inc.
author list (cited authors)
Kao, Y. C., & Eknoyan, O.