Improved efficiency microwave BARITT oscillators by delayed injection Academic Article uri icon

abstract

  • A new microwave BARITT diode structure which utilizes an intentionally added retarding-field region is presented. By taking advantage of the carrier diffusion at low velocities in this region, the injected current is delayed relative to the ac voltage and improved efficiency diodes are obtained. Microwave CW oscillation at C band with efficiency of ~4 percent has been realized. Although the efficiency is improved over previous BARITT diodes, it is believed that considerable further improvements are possible by further optimization. Copyright © 1975 by The Institute of Electrical and Electronics Engineers, Inc.

author list (cited authors)

  • Eknoyan, O., Sze, S. M., Yang, E. S., & Ryder, R. M.

citation count

  • 1

publication date

  • January 1975