IMPROVED EFFICIENCY MICROWAVE BARITT OSCILLATORS BY DELAYED INJECTION Academic Article

abstract

• A new microwave BARITT diode structure which utilizes an intentionally added retarding-field region is presented. By taking advantage of the carrier diffusion at low velocities in this region, the injected current is delayed relative to the ac voltage and improved efficiency diodes are obtained. Microwave CW oscillation at C band with efficiency of ~4 percent has been realized. Although the efficiency is improved over previous BARITT diodes, it is believed that considerable further improvements are possible by further optimization. Copyright 1975 by The Institute of Electrical and Electronics Engineers, Inc.

authors

• Eknoyan, Ohannes

published proceedings

• PROCEEDINGS OF THE IEEE

author list (cited authors)

• EKNOYAN, O., SZE, S. M., YANG, E. S., & RYDER, R. M.

citation count

• 1

complete list of authors

• EKNOYAN, O||SZE, SM||YANG, ES||RYDER, RM

publication date

• January 1975

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• Proceedings of the Institute of Electrical and Electronics Engineers (IEEE)  Journal

keywords

• 40 Engineering
• 4009 Electronics, Sensors And Digital Hardware

Digital Object Identifier (DOI)

• 10.1109/PROC.1975.10017

start page

• 1620

end page

• 1621

volume

• 63

issue

• 11

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Fproc.1975.10017