GaP SCHOTTKY DIODES FOR HIGH TEMPERATURE APPLICATIONS. Academic Article

abstract

• A need for high temperature electronic components has been established. In an effort to meet part of this need four metals have been evaluated for use in fabricating a Schottky barrier diode. Schottky diodes made from Pt, Cr, Al and Ni were aged for 1000 hours at 275 degree C. These devices were evaluated considering the barrier height and leakage current density as a function of aging time. Results indicate that the devices are dominated by a large surface state density which is partially compensated by prolonged aging. Nickel Schottky diodes emerge as the most stable devices.

authors

• Eknoyan, Ohannes
• Weichold, Mark

published proceedings

• Proceedings - Electronic Components and Technology Conference

author list (cited authors)

• Weichold, M. H., Eknoyan, O., & Coquat, J. A.

complete list of authors

• Weichold, MH||Eknoyan, O||Coquat, JA

publication date

• January 1981

published in

• Electronic Components and Technology Conference  Journal

start page

• 323

end page

• 327