GaP SCHOTTKY DIODES FOR HIGH TEMPERATURE APPLICATIONS.
- Additional Document Info
- View All
A need for high temperature electronic components has been established. In an effort to meet part of this need four metals have been evaluated for use in fabricating a Schottky barrier diode. Schottky diodes made from Pt, Cr, Al and Ni were aged for 1000 hours at 275 degree C. These devices were evaluated considering the barrier height and leakage current density as a function of aging time. Results indicate that the devices are dominated by a large surface state density which is partially compensated by prolonged aging. Nickel Schottky diodes emerge as the most stable devices.
Proceedings - Electronic Components and Technology Conference
author list (cited authors)
Weichold, M. H., Eknoyan, O., & Coquat, J. A.
complete list of authors
Weichold, MH||Eknoyan, O||Coquat, JA