A circuit level fault model for resistive shorts of MOS gate oxide Conference Paper

abstract

• Previous researchers in logic testing focused on shorts in MOS gate oxides that have zero-resistance. However, most shorts are resistive and may cause delay faults. In this paper, we propose a simple and realistic delay fault model for gate oxide shorts. A reasonably accurate method is proposed to compute delay change due to resistive shorts. We also enumerate all possible fault behaviors and present the relationship between input patterns and output behaviors, which is useful in ATPG. 2005 IEEE.

name of conference

• Fifth International Workshop on Microprocessor Test and Verification (MTV'04)

authors

• Shi, Weiping
• Walker, Duncan

published proceedings

• 5th International Workshop on Microprocessor Test and Verification: Common Challenges and Solutions, Proceedings

author list (cited authors)

• Lu, X., Li, Z., Qiu, W. Q., Walker, D., & Shi, W. P.

citation count

• 4

complete list of authors

• Lu, X||Li, Z||Qiu, WQ||Walker, DMH||Shi, WP

publication date

• January 2005

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

published in

• Proceedings - International Workshop on Microprocessor Test and Verification  Journal

Digital Object Identifier (DOI)

• 10.1109/mtv.2004.1

International Standard Book Number (ISBN) 10

• 0-7695-2320-X

start page

• 97

end page

• 102

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Fmtv.2004.1