Photoluminescence of GaN nanowires of different crystallographic orientations. Academic Article uri icon


  • We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

published proceedings

  • Nano Lett

altmetric score

  • 0.25

author list (cited authors)

  • Chin, A. H., Ahn, T. S., Li, H., Vaddiraju, S., Bardeen, C. J., Ning, C., & Sunkara, M. K.

citation count

  • 71

complete list of authors

  • Chin, Alan H||Ahn, Tai S||Li, Hongwei||Vaddiraju, Sreeram||Bardeen, Christopher J||Ning, Cun-Zheng||Sunkara, Mahendra K

publication date

  • March 2007