Photoluminescence of GaN nanowires of different crystallographic orientations.
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We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.
author list (cited authors)
Chin, A. H., Ahn, T. S., Li, H., Vaddiraju, S., Bardeen, C. J., Ning, C., & Sunkara, M. K.
complete list of authors
Chin, Alan H||Ahn, Tai S||Li, Hongwei||Vaddiraju, Sreeram||Bardeen, Christopher J||Ning, Cun-Zheng||Sunkara, Mahendra K