Photoluminescence of GaN nanowires of different crystallographic orientations. Academic Article

abstract

• We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

authors

• Vaddiraju, Sreeram

published proceedings

• Nano Lett

altmetric score

• 0.5

author list (cited authors)

• Chin, A. H., Ahn, T. S., Li, H., Vaddiraju, S., Bardeen, C. J., Ning, C., & Sunkara, M. K.

citation count

• 75

complete list of authors

• Chin, Alan H||Ahn, Tai S||Li, Hongwei||Vaddiraju, Sreeram||Bardeen, Christopher J||Ning, Cun-Zheng||Sunkara, Mahendra K

publication date

• March 2007

publisher

• American Chemical Society (ACS)  Publisher

published in

• Nano Letters: a journal dedicated to nanoscience and nanotechnology  Journal

keywords

• 0205 Optical Physics
• 40 Engineering
• 4018 Nanotechnology

PubMed Central ID

• 17324001

Digital Object Identifier (DOI)

• 10.1021/nl062524o

start page

• 626

end page

• 631

volume

• 7

issue

• 3

URL

• http://dx.doi.org/10.1021/nl062524o