Photoluminescence of GaN Nanowires of Different Crystallographic Orientations Academic Article uri icon

abstract

  • We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

author list (cited authors)

  • Chin, A. H., Ahn, T. S., Li, H., Vaddiraju, S., Bardeen, C. J., Ning, C., & Sunkara, M. K.

publication date

  • January 1, 2007 11:11 AM