Magnetic field induced insulator to metal transition in amorphous-GdxSi1x Academic Article uri icon


  • We have measured the electrical resistance and magnetoresistance near the metal-insulator transition in films of the amorphous alloys GdxSi1-x and YxSi1-x (x to approximately 0.14-0.15) for 0.1 K

published proceedings

  • Solid State Communications

author list (cited authors)

  • Teizer, W., Hellman, F., & Dynes, R. C.

citation count

  • 32

complete list of authors

  • Teizer, W||Hellman, F||Dynes, RC

publication date

  • March 2000