Density of states of amorphous GdxSi1-x at the metal-insulator transition. Academic Article uri icon

abstract

  • We have determined the electronic density of states of amorphous Gd xSi (1-x), N(GdSi)(E), in the vicinity of the metal-insulator transition by measuring the tunneling conductance dI/dV across a Gd xSi (1-x)/oxide/Pb tunnel junction at low T (T approximately 100 mK). By applying a magnetic field we can tune through the metal-insulator transition and simultaneously measure the transport and N(E) on a single sample. We find a smooth transition from a metal with strong Coulomb interactions to a developing Coulomb gap in the insulating regime. In the metallic region N(GdSi)(0) scales approximately with sigma(2).

published proceedings

  • Phys Rev Lett

author list (cited authors)

  • Teizer, W., Hellman, F., & Dynes, R. C.

citation count

  • 44

complete list of authors

  • Teizer, W||Hellman, F||Dynes, RC

publication date

  • July 2000