Thin Film Adsorption of 4He to C60Academic Article
Overview
Additional Document Info
View All
Overview
abstract
Low temperature adsorption isotherms of 4He on C60 films are presented. Data is obtained by monitoring the frequency of C60-coated quartz crystal microbalances versus pressure as 4He gas is added to an experimental cell at constant temperature. Results which indicate excess low coverage 4He adsorption to C60 are presented for T=1.5 K and T=1.68 K.