Thin Film Adsorption of 4He to C60 Academic Article uri icon

abstract

  • Low temperature adsorption isotherms of 4He on C60 films are presented. Data is obtained by monitoring the frequency of C60-coated quartz crystal microbalances versus pressure as 4He gas is added to an experimental cell at constant temperature. Results which indicate excess low coverage 4He adsorption to C60 are presented for T=1.5 K and T=1.68 K.

published proceedings

  • Journal of Low Temperature Physics

author list (cited authors)

  • Teizer, W., Hallock, R. B., & Hebard, A. F.

complete list of authors

  • Teizer, W||Hallock, RB||Hebard, AF

publication date

  • December 1998