Electron Irradiation of Graphene Field Effect Transistor Devices Conference Paper

abstract

• ABSTRACTWe report the effects of electron irradiation on graphene Field Effect Transistor (FET) devices. We irradiated the graphene devices with 30keV electrons and measured the electrical transport properties in high vacuum in-situ. Upon electron irradiation, a Raman D band appears. In addition, we observed that the doping behavior of the graphene devices changed from P to N type as a result of the irradiation. We also observed a shift of the Dirac point while the graphene FET device stays in vacuum and after it interacted with environmental molecules under ambient conditions.

authors

• Teizer, Winfried

published proceedings

• MRS Advances

author list (cited authors)

• Woo, S. O., & Teizer, W.

citation count

• 1

complete list of authors

• Woo, Sung Oh||Teizer, Winfried

publication date

• January 2013

publisher

• Springer Nature  Publisher

published in

• MRS Online Proceedings Library  Journal

keywords

• 40 Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/opl.2013.946

International Standard Book Number (ISBN) 13

• 9781605115269

start page

• 35

end page

• 40

volume

• 1549

issue

• 2

URL

• http%3A%2F%2Fdx.doi.org%2F10.1557%2Fopl.2013.946