Improved Fitting Of the Spin Polarized Tunneling Conductance Near the Metal‐Insulator Transition Conference Paper uri icon

abstract

  • We have determined the spin-polarized (SP) density of states (DOS) of 3-dimensional amorphous (a-) GdxSi1-x in the quantum critical regime (QCR) of a magnetic field tunable metal-insulator transition (MIT) by measuring the SP tunneling conductance of an Al/Al2O 3/a-GdxSi1-x planar tunnel junction at T=25mK and H≤3.0T. A SP Abrikosov-Gorkov (AG) DOS has been used to fit the data leading to a significant improvement over prior attempts to use a SP Bardeen-Cooper-Schrieffer (BCS) DOS. We find a large polarization near the MIT of a-GdxSi1-x (x=0.14). © 2006 American Institute of Physics.

author list (cited authors)

  • Teizer, W., Srivastava, R., Hellman, F., & Dynes, R. C.

publication date

  • January 1, 2006 11:11 AM

publisher

  • AIP  Publisher