Hall effect at a tunable metal-insulator transition
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Using a rotating magnetic field, the Hall effect in three-dimensional amorphous (formula presented) has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient (formula presented) is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. (formula presented) diverges at the metal-insulator transition, and displays critical behavior with exponent (formula presented) (formula presented) This dependence is interpreted as a linear decrease in the density of mobile carriers (formula presented) indicative of the dominant influence of interaction effects. 2003 The American Physical Society.
author list (cited authors)
Teizer, W., Hellman, F., & Dynes, R. C.
complete list of authors
Teizer, W||Hellman, F||Dynes, RC