Hall effect at a tunable metal-insulator transition Academic Article uri icon


  • Using a rotating magnetic field, the Hall effect in three-dimensional amorphous (formula presented) has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient (formula presented) is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. (formula presented) diverges at the metal-insulator transition, and displays critical behavior with exponent (formula presented) (formula presented) This dependence is interpreted as a linear decrease in the density of mobile carriers (formula presented) indicative of the dominant influence of interaction effects. 2003 The American Physical Society.

published proceedings


author list (cited authors)

  • Teizer, W., Hellman, F., & Dynes, R. C.

citation count

  • 7

complete list of authors

  • Teizer, W||Hellman, F||Dynes, RC

publication date

  • March 2003