Hall effect at a tunable metal-insulator transition Academic Article

abstract

• Using a rotating magnetic field, the Hall effect in three-dimensional amorphous (formula presented) has been measured in the critical regime of the metal-insulator transition for a constant total magnetic field. The Hall coefficient (formula presented) is negative, indicating electronlike conductivity, with a magnitude that increases with decreasing conductivity. (formula presented) diverges at the metal-insulator transition, and displays critical behavior with exponent (formula presented) (formula presented) This dependence is interpreted as a linear decrease in the density of mobile carriers (formula presented) indicative of the dominant influence of interaction effects. 2003 The American Physical Society.

authors

• Teizer, Winfried

published proceedings

• PHYSICAL REVIEW B

author list (cited authors)

• Teizer, W., Hellman, F., & Dynes, R. C.

citation count

• 7

complete list of authors

• Teizer, W||Hellman, F||Dynes, RC

publication date

• March 2003

publisher

• American Physical Society (APS)  Publisher

published in

• Physical Review B: Condensed Matter and Materials Physics  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1103/PhysRevB.67.121102

start page

• 121102

end page

• 1211024

volume

• 67

issue

• 12

URL

• http%3A%2F%2Fdx.doi.org%2F10.1103%2Fphysrevb.67.121102