The Hall effect in a-GdxSi1-x at the metal-insulator transition Conference Paper

abstract

• We have measured the Hall effect in 3-d amorphous GdxSi1-x films in the critical regime of the metal-insulator transition (MIT) at T = 400 mK. a-GdxSi1-x exhibits a large negative magnetoresistance which is independent of the orientation of the magnetic field H with respect to the film and allows an in situ tuning of the conductivity through the MIT with H. We find an electron-like Hall coefficient RH. As the material becomes less metallic, RH increases. We find that RH is a critical quantity with critical exponent -1(RH(H-HC)-1). 2003 Elsevier Science B.V. All rights reserved.

authors

• Teizer, Winfried

published proceedings

• PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

author list (cited authors)

• Teizer, W., Hellman, F., & Dynes, R. C.

citation count

• 1

complete list of authors

• Teizer, W||Hellman, F||Dynes, RC

publication date

• May 2003

publisher

• Elsevier  Publisher

published in

• Physica E: Low-Dimensional Systems and Nanostructures  Journal

keywords

• Correlation
• Hall Effect
• LOCALIZATION
• Metal-insulator Transition

Digital Object Identifier (DOI)

• 10.1016/S1386-9477(02)01011-1

URI

• http://dx.doi.org/10.1103/PhysRevB.67.121102

start page

• 266

end page

• 269

volume

• 18

issue

• 1-3

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fs1386-9477%2802%2901011-1