Using AG theory to model a S/I/N tunnel junction Conference Paper

abstract

• We have measured the spin polarized tunneling conductance of a thin Al/Al2O3/amorphous GdxSi1-x planar tunnel junction at T=25 mK in parallel magnetic field H3.0 T. Abrikosov-Gorkov theory is a better model for the thin superconducting Al electrode than previously used Bardeen-Cooper-Schrieffer theory. As the magnetic field is increased, we find the best fit to the data by modelling a transition from a superconductor with gap (<1) to a gapless superconductor (>1). 2007 Elsevier B.V. All rights reserved.

authors

• Teizer, Winfried

published proceedings

• PHYSICA B-CONDENSED MATTER

author list (cited authors)

• Srivastava, R. A., Teizer, W., Hellman, F., & Dynes, R. C.

citation count

• 0

complete list of authors

• Srivastava, Rn A||Teizer, W||Hellman, F||Dynes, RC

publication date

• April 2008

publisher

• Elsevier  Publisher

published in

• Physica B: Condensed Matter  Journal

keywords

• Metal-insulator Transition
• Spin Polarization
• Superconductor
• Tunneling

Digital Object Identifier (DOI)

• 10.1016/j.physb.2007.10.315

start page

• 1321

end page

• 1322

volume

• 403

issue

• 5-9

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2Fj.physb.2007.10.315