Gap-mode enhancement on MoS2probed by functionalized tip-enhanced Raman spectroscopy Academic Article uri icon


  • 2016 Author(s). Surface enhancement of molecular spectroscopic signals has been widely used for sensing and nanoscale imaging. Because of the weak electromagnetic enhancement of Raman signals on semiconductors, it is motivating but challenging to study the electromagnetic effect separately from the chemical effects. We report tip-enhanced Raman scattering measurements on Au and bulk MoS2 substrates using a metallic tip functionalized with copper phthalocyanine molecules and demonstrate similar gap-mode enhancement on both substrates. We compare the experimental results with theoretical calculations to confirm the gap-mode enhancement on MoS2 using a well-established electrostatic model. The functionalized tip approach allows for suppressing the background and is ideal for separating electromagnetic and chemical enhancement mechanisms on various substrates. Our results may find a wide range of applications in MoS2-based devices, sensors, and metal-free nanoscale bio-imaging.

published proceedings

  • Applied Physics Letters

altmetric score

  • 0.5

author list (cited authors)

  • Alajlan, A. M., Voronine, D. V., Sinyukov, A. M., Zhang, Z., Sokolov, A. V., & Scully, M. O.

citation count

  • 22

complete list of authors

  • Alajlan, Abdulrahman M||Voronine, Dmitri V||Sinyukov, Alexander M||Zhang, Zhenrong||Sokolov, Alexei V||Scully, Marlan O

publication date

  • September 2016