THE HALL-EFFECT IN AMORPHOUS (ZR0.64NI0.36)1-XALX(ZR0.64NI0.36)1-XGAX ALLOYS uri icon

abstract

  • Values of the room temperature Hall coefficients and electrical resistivity of amorphous melt spun (Zr0.64Ni0.36)1-xAlx and (Zr0.64Ni0.36)1-xGax alloys for x=0-0.25 are reported. Addition of Al or Ga to Zr0.64Ni0.36 dramatically increases the already positive Hall coefficient of this alloy and also increases the electrical resistivity and crystallization temperature. 1990 Springer-Verlag.

published proceedings

  • ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER

author list (cited authors)

  • RHIE, K., NAUGLE, D. G., & BHATNAGAR, A. K.

citation count

  • 11

complete list of authors

  • RHIE, K||NAUGLE, DG||BHATNAGAR, AK

publication date

  • October 1990