Electron transport properties of amorphous Tix(Cu0.70A10.30)1-x and Tix(Cu0.15A10.85)1-x quench condensed thin films
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The electrical resistivity , temperature coefficient of resistance TCR and the Hall coefficient RH of amorphous Ti-Cu-Al thin film alloys prepared by co-condensation in UHV onto liquid nitrogen cooled substrates are reported as a function of Ti concentration for two different ratios of the simple metal components: Tix(Cu0.70Al0.30)1-x with 0.22 < x < 0.66 and Tix(Cu0.15Al0.85)1-x with 0.15 < x < 0.55. RH is positive and usually larger for more Al rich alloys. TCR is negative, and is comparable to the corresponding TixAl1-x films.