DOPING PROCESS-CONTROL IN SILICON EPITAXY .2. CALCULATION OF OPTIMUM CONTROL Academic Article

abstract

• A procedure is developed to obtain desired dopant profile in epitaxial layer growth. Based an the results of system identification, linearquadratic optimal control theory is used to determine the optimal input PH3 concentration as a function of time. In the performance index an auxiliary weighting coefficient must be incorporated. It is discussed how to select this weighting coefficient. Copyright 1983 WILEYVCH Verlag GmbH & Co. KGaA

authors

• Valko, Peter

published proceedings

• CRYSTAL RESEARCH AND TECHNOLOGY

author list (cited authors)

• VALKO, P., KOSZA, G., & RICHTER, F.

citation count

• 1

complete list of authors

• VALKO, P||KOSZA, G||RICHTER, F

publication date

• January 1983

publisher

• Wiley  Publisher

published in

• Crystal Research and Technology: journal of experimental and industrial crystallography  Journal

Digital Object Identifier (DOI)

• 10.1002/crat.2170181219

start page

• 1541

end page

• 1545

volume

• 18

issue

• 12

URL

• http%3A%2F%2Fdx.doi.org%2F10.1002%2Fcrat.2170181219