Doping process control in silicon epitaxy (II). Calculation of optimum control Academic Article uri icon

abstract

  • A procedure is developed to obtain desired dopant profile in epitaxial layer growth. Based an the results of system identification, linearquadratic optimal control theory is used to determine the optimal input PH3 concentration as a function of time. In the performance index an auxiliary weighting coefficient must be incorporated. It is discussed how to select this weighting coefficient. Copyright 1983 WILEYVCH Verlag GmbH & Co. KGaA

published proceedings

  • Crystal Research and Technology

author list (cited authors)

  • Valk, P., Ksza, G., & Richter, F.

complete list of authors

  • Valkó, P||Kósza, G||Richter, F

publication date

  • January 1, 1983 11:11 AM

publisher