Room-temperature semiconductor coherent Smith–Purcell terahertz sources
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We propose a room-temperature semiconductor source of coherent narrowband Smith-Purcell radiation (SPR) in the low-to-mid terahertz range. The device is a planar Gunn diode with a metallic grating deposited near the drift region. Stimulated SPR is generated as domains move under the grating. Radiation frequency is determined by the domain velocity and grating period-it is not transit-time limited. The approach is photolithographically tunable, readily scales to arrays, and is compatible with any planar Gunn technology. Integration with a planar antenna improves radiation efficiency and enables far-field optimization. We develop an analytic theory of the devices which agrees well with simulations. Results indicate that this method may achieve technologically relevant power density levels and warrants experimental investigation. © 2011 American Institute of Physics.
author list (cited authors)
Smith, D. D., & Belyanin, A.