Novel schemes and prospects of superradiant lasing in heterostructures
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The phenomenon of collective recombination (superfluorescence or superradiance) of electrons and holes in semiconductor heterostructures of all possible dimensions, D = 0, 1, 2, 3 is analyzed. We show that, at the current level of technology, superradiant recombination can be realized most easily in quantum-well and quantum-dot laser structures and that it leads to the spontaneous generation of coherent radiation pulses whose duration is shorter than incoherent relaxation times. We analyze a novel superradiant regime for the ultrafast operation of heterolasers, in which a quasiperiodic sequence of femtosecond pulses is emitted under continuous pumping (injection or optical). According to our calculations for different types of semiconductor active media, coherent optical pulses with a duration up to 100 fs and an extreme peak intensity up to 100 MW/cm2 can be generated in a cavity of length ∼ 10 μm, even at room temperature. On this basis, we propose a way to obtain ultrashort optical oscillations in semiconductor materials for which lasing was not realized or was characterized by very low quantum efficiency. In particular, lasing at 1.3-1.5 μm direct transition in indirect band-gap GeSi/Ge heterostructures is especially promising for applications in optoelectronics and fiber optics. Various schemes and regimes of superradiant laser generation are discussed, and their prospects are outlined.
author list (cited authors)
Belyanin, A. A., Kocharovsky, V. V., Kocharovsky, V. V., & Pestov, D. S.
complete list of authors
Belyanin, AA||Kocharovsky, VV||Kocharovsky, VV||Pestov, DS