Nonlinear mode mixing in dual-wavelength semiconductor lasers with tunnel junctions
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The authors demonstrate and study two- and three-wavelength generations in the semiconductor diode laser with a tunnel junction separating two different quantum-well active regions integrated within a single waveguide. To avoid resonant cross absorption of the modes at different frequencies and achieve phase matching, the laser waveguide is designed to generate the first-order transverse mode at a longer wavelength and the third-order mode at a shorter wavelength. Excellent agreement with the designed and measured device parameters is observed. Intracavity nonlinear mixing leading to sum-frequency and second-harmonic generation is demonstrated. © 2007 American Institute of Physics.
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Nekorkin, S. M., Biryukov, A. A., Demina, P. B., Semenov, N. N., Zvonkov, B. N., Aleshkin, V. Y., ... Kocharovsky, V. V
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Nekorkin, SM||Biryukov, AA||Demina, PB||Semenov, NN||Zvonkov, BN||Aleshkin, V Ya||Dubinov, AA||Gavrilenko, VI||Maremyanin, KV||Morozov, SV||Belyanin, AA||Kocharovsky, VV||Kocharovsky, Vl V
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