Theory of deep traps at semiconductor interfaces Academic Article uri icon

abstract

  • Impurities that are shallow donors or acceptors in bulk semiconductors can become deep traps at interfaces. For example, P on one of the Si sites at a Si/GaP interface is predicted to be a deep trap.

author list (cited authors)

  • Allen, R. E., Buisson, J. P., & Dow, J. D.

citation count

  • 12

publication date

  • December 1981