Role of surface antisite defects in the formation of Schottky barriers uri icon

abstract

  • Surface antisite defects produce electronic energy levels in the band gaps of III-V compound semiconductors. These levels can pin the Fermi energy at metal-semiconductor interfaces and cause Schottky-barrier formation. 1982 The American Physical Society.

published proceedings

  • Physical Review B

author list (cited authors)

  • Allen, R. E., & Dow, J. D.

citation count

  • 129

complete list of authors

  • Allen, Roland E||Dow, John D

publication date

  • January 1982