Role of surface antisite defects in the formation of Schottky barriers Academic Article uri icon

abstract

  • Surface antisite defects produce electronic energy levels in the band gaps of III-V compound semiconductors. These levels can pin the Fermi energy at metal-semiconductor interfaces and cause Schottky-barrier formation. © 1982 The American Physical Society.

author list (cited authors)

  • Allen, R. E., & Dow, J. D.

citation count

  • 127

publication date

  • January 1982