Theory of Schottky Barriers for III-V and Group-IV Semiconductors
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A theory of Schottky barriers for III-V and Group-IV semiconductors must explain numerous experimental observations. We describe a theory of Schottky barriers for III-V and Group-IV semiconductors that is in agreement with observations and other features of experimental measurements. The theory is based on Fermi-level pinning by levels associated with defects at the semiconductor/metal interface. We believe that this theory is applicable to most observed barriers, but recognize that other mechanisms can be important in some cases. For example, the original Schottky mechanism of charge transfer between a metal and a semiconductor without defect states in the fundamental band gap appears to dominate for nonreactive metals on GaSe.
