Theory of deep impurity levels in CuCl Academic Article uri icon

abstract

  • The theory of deep impurity levels is extended to semiconductors with d electrons. The major chemical trends are predicted for a large number of substitutional impurities in CuCl. Deep levels are found for S and Se impurities on the Cl site, but not for Ag or Au on the Cu site, in agreement with experiment. The theory also predicts no deep level for isolated O on the Cl site, thus supporting the conclusion that the observed O-related defect is not a simple substitutional impurity. 1982 The American Physical Society.

published proceedings

  • Physical Review B

author list (cited authors)

  • Ren, S., Allen, R. E., Dow, J. D., & Lefkowitz, I.

citation count

  • 19

complete list of authors

  • Ren, Shang-Yuan||Allen, Roland E||Dow, John D||Lefkowitz, I

publication date

  • January 1982