Role of dangling bonds and antisite defects in rapid and gradual III-V laser degradation Academic Article uri icon

abstract

  • Based on calculations of deep trap energies, it is proposed that the rapid (1 h) degradation of high-radiance (1018 carriers/cm3) Ga-rich III-V semiconductor lasers proceeds through self-reproducing dangling bond deep traps generated as a result of nonradiative recombination. This degradation mechanism can be inhibited by constructing lasers from alloys whose dangling bond energy levels do not lie within the fundamental band gap. The gradual (106 h) III-V laser degradation is tentatively associated with recombination events at an anion-on-cation-site deep trap.

published proceedings

  • Applied Physics Letters

author list (cited authors)

  • Dow, J. D., & Allen, R. E.

citation count

  • 33

complete list of authors

  • Dow, John D||Allen, Roland E

publication date

  • October 1982