Role of dangling bonds and antisite defects in rapid and gradual III‐V laser degradation Academic Article uri icon

abstract

  • Based on calculations of deep trap energies, it is proposed that the rapid (∼1 h) degradation of high-radiance (≳1018 carriers/cm 3) Ga-rich III-V semiconductor lasers proceeds through self-reproducing dangling bond deep traps generated as a result of nonradiative recombination. This degradation mechanism can be inhibited by constructing lasers from alloys whose dangling bond energy levels do not lie within the fundamental band gap. The gradual (∼106 h) III-V laser degradation is tentatively associated with recombination events at an anion-on-cation-site deep trap.

author list (cited authors)

  • Dow, J. D., & Allen, R. E.

citation count

  • 29

publication date

  • October 1982