Electronic energy levels of point defects at the GaSb (110) surface Academic Article uri icon


  • Deep energy levels are predicted for substitutional sp3-bonded defects at the (110) surface of GaSb. 1982.

published proceedings

  • Solid State Communications

author list (cited authors)

  • Allen, R. E., Dow, J. D., & Hjalmarson, H. P.

citation count

  • 15

complete list of authors

  • Allen, RE||Dow, JD||Hjalmarson, HP

publication date

  • February 1982