Electronic energy levels of point defects at the GaSb (110) surface Academic Article

abstract

• Deep energy levels are predicted for substitutional sp3-bonded defects at the (110) surface of GaSb. 1982.

authors

• Allen, Roland

published proceedings

• Solid State Communications

author list (cited authors)

• Allen, R. E., Dow, J. D., & Hjalmarson, H. P.

citation count

• 15

complete list of authors

• Allen, RE||Dow, JD||Hjalmarson, HP

publication date

• February 1982

publisher

• Elsevier  Publisher

published in

• Solid State Communications  Journal

keywords

• 7 Affordable And Clean Energy

Digital Object Identifier (DOI)

• 10.1016/0038-1098(82)91192-9

start page

• 419

end page

• 422

volume

• 41

issue

• 5

URL

• http%3A%2F%2Fdx.doi.org%2F10.1016%2F0038-1098%2882%2991192-9

user-defined tag

• 7 Affordable and Clean Energy