Electronic energy levels of point defects at the GaSb (110) surface Academic Article uri icon

abstract

  • Deep energy levels are predicted for substitutional sp3-bonded defects at the (110) surface of GaSb. © 1982.

author list (cited authors)

  • Allen, R. E., Dow, J. D., & Hjalmarson, H. P.

citation count

  • 15

publication date

  • February 1982