Electronic energy levels of point defects at the GaSb (110) surface
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Overview
abstract
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Deep energy levels are predicted for substitutional sp3-bonded defects at the (110) surface of GaSb. 1982.
published proceedings
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Solid State Communications
author list (cited authors)
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Allen, R. E., Dow, J. D., & Hjalmarson, H. P.
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Allen, RE||Dow, JD||Hjalmarson, HP
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7 Affordable And Clean Energy
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URL
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http%3A%2F%2Fdx.doi.org%2F10.1016%2F0038-1098%2882%2991192-9
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7 Affordable and Clean Energy