Multi-MeV ion implantation accelerator system
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Ion implantation makes possible dramatic improvements in the surface properties of metals. For many applications the required penetration depth is several microns, corresponding to an ion beam energy of several MeV. This paper describes the design of a compact, efficient accelerator system for such applications. The system is based on a MEVVA ion source and a 4-bar RF quadrupole design. 1987.