Multi-MeV ion implantation accelerator system Academic Article uri icon

abstract

  • Ion implantation makes possible dramatic improvements in the surface properties of metals. For many applications the required penetration depth is several microns, corresponding to an ion beam energy of several MeV. This paper describes the design of a compact, efficient accelerator system for such applications. The system is based on a MEVVA ion source and a 4-bar RF quadrupole design. 1987.

published proceedings

  • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

author list (cited authors)

  • Dibitonto, D., Huson, R., McIntyre, P., Nassiri, A., Raparia, D., & Swenson, C.

citation count

  • 5

complete list of authors

  • Dibitonto, D||Huson, R||McIntyre, P||Nassiri, A||Raparia, D||Swenson, C

publication date

  • January 1987