MULTI-MEV ACCELERATOR SYSTEM FOR ION-IMPLANTATION
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abstract
Ion implantation makes possible dramatic improvements in the surface properties of metals. For many applications the required penetration depth is several m, corresponding to an ion beam energy of several MeV. This paper describes the design of a compact, efficient accelerator system for such applications. The system is based on a MEVVA ion source and a high gradient rf quadrupole design. 1987 Elsevier Science Publishers B.V. (North-Holland Physics Publishing Division) All rights reserved.