Fabrication of diamond microstub photoemitters with strong photoluminescence of SiV color centers: bottom-up approach
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2014, Springer-Verlag Berlin Heidelberg. Arrays of diamond photoemitters with silicon-vacancy (SiV) photoluminescent (PL) centers have been produced by epitaxy of CVD diamond inside laser-ablated channels in a-Si mask on single crystal or polycrystalline diamond substrates, the mask also serving as Si-doping source. Strong PL emission from the SiV centers with zero-phonon line at 738.6nm wavelength (6nm width, 0.8ns decay time), localized within the photoemitters, has been measured.
author list (cited authors)
Sovyk, D., Ralchenko, V., Komlenok, M., Khomich, A. A., Shershulin, V., Vorobyov, V., ... Akimov, A.
complete list of authors
Sovyk, D||Ralchenko, V||Komlenok, M||Khomich, AA||Shershulin, V||Vorobyov, V||Vlasov, I||Konov, V||Akimov, A