Fabrication of diamond microstub photoemitters with strong photoluminescence of SiV color centers: bottom-up approach Academic Article uri icon

abstract

  • © 2014, Springer-Verlag Berlin Heidelberg. Arrays of diamond photoemitters with silicon-vacancy (SiV) photoluminescent (PL) centers have been produced by epitaxy of CVD diamond inside laser-ablated channels in a-Si mask on single crystal or polycrystalline diamond substrates, the mask also serving as Si-doping source. Strong PL emission from the SiV centers with zero-phonon line at 738.6 nm wavelength (6 nm width, 0.8 ns decay time), localized within the photoemitters, has been measured.

author list (cited authors)

  • Sovyk, D., Ralchenko, V., Komlenok, M., Khomich, A. A., Shershulin, V., Vorobyov, V., ... Akimov, A.

citation count

  • 14

publication date

  • January 2015