Synthesis and doping of microcolumn diamond photoemitters with silicon-vacancy color centers Academic Article uri icon

abstract

  • © 2015, Allerton Press, Inc. The method of epitaxial growth of localized photoluminescence sources in the form of the ordered microcolumn diamond structures with silicon-vacancy (SiV) color centers is implemented. The process is based on diamond deposition in microwave plasma in CH 4 -H 2 mixtures in microwells in a silicon mask on a diamond single crystal substrate, where the Si mask itself is a silicon doping source. Strong photoluminescence of SiV centers at a wavelength of 738 nm is detected; the spatial distribution of luminescence completely coincides with the synthesized structure arrangement.

author list (cited authors)

  • Sovyk, D. N., Shershulin, V. A., Ralchenko, V. G., Khomich, A. A., Komlenok, M. S., Vorobyov, V. V., ... Konov, V. I

complete list of authors

  • Sovyk, DN||Shershulin, VA||Ralchenko, VG||Khomich, AA||Komlenok, MS||Vorobyov, VV||Vlasov, II||Akimov, AV||Pereverzev, VG||Konov, VI

publication date

  • January 1, 2015 11:11 AM