EFFECTS OF HE-3 IMPURITIES ON THE HE-4 SOLID-LIQUID INTERFACE Conference Paper

abstract

• Using crystallization waves we have measured the interfacial stiffness, {Mathematical expression}, and the temperature dependence of the growth resistance, (Km)-1, of the4He solid-liquid interface in the presence of3He impurities. For the purest4He sample, (Km)-1 is consistent at the lowest temperatures with the assumption that the growth velocity is limited by the scattering of ballistic phonons from the moving interface. At higher concentrations of3He, we observe that (Km)-1 increases exponentially with temperature below 0.25 K. We observe that {Mathematical expression} decreases with increasing3He concentration. 1992 Plenum Publishing Corporation.

authors

• Agnolet, Glenn

published proceedings

• JOURNAL OF LOW TEMPERATURE PHYSICS

author list (cited authors)

• WANG, C. L., & AGNOLET, G.

citation count

• 23

complete list of authors

• WANG, CL||AGNOLET, G

publication date

• November 1992

publisher

• Springer Nature  Publisher

published in

• Journal of Low Temperature Physics  Journal

keywords

• 51 Physical Sciences
• 5103 Classical Physics
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1007/BF00694135

start page

• 759

end page

• 762

volume

• 89

issue

• 3-4

URL

• http%3A%2F%2Fdx.doi.org%2F10.1007%2Fbf00694135