Maximizing the Storage Capacity of Nonvolatile Memories Conference Paper

abstract

• We propose variable-level cell, a new data representation scheme, for nonvolatile memories (including flash memories, phase-change memories, etc.). We derive its storage capacity, and analyze its performance on rewriting data. 2011 IEEE.

name of conference

• 2011 Information Theory and Applications Workshop

authors

• Jiang, Anxiao (Andrew)

published proceedings

• 2011 Information Theory and Applications Workshop

author list (cited authors)

• Jiang, A., Zhou, H., & Bruck, J.

citation count

• 0

complete list of authors

• Jiang, Anxiao||Zhou, Hongchao||Bruck, Jehoshua

publication date

• January 2011

publisher

• Institute of Electrical and Electronics Engineers (IEEE)  Publisher

Digital Object Identifier (DOI)

• 10.1109/ita.2011.5743584

International Standard Book Number (ISBN) 13

• 9781457703614

start page

• 1

end page

• 9

URL

• http%3A%2F%2Fdx.doi.org%2F10.1109%2Fita.2011.5743584