Evidence for the Ligand-Assisted Energy Transfer from Trapped Exciton to Dopant in Mn-Doped CdS/ZnS Semiconductor Nanocrystals Academic Article uri icon

abstract

  • Trapping of charge carriers is the major process competing with radiative recombination or transfer of charge carriers important in the application of semiconductor nanocrystals in photonics and photocatalysis. In typical semiconductor quantum dots, trapping of charge carriers usually leads to quenching of exciton luminescence. In this study, we present evidence indicating that thiol ligands on the surface that quench exciton luminescence can have an opposite effect on sensitized dopant luminescence in doped semiconductor nanocrystals by facilitating the recovery of the trapped exciton for sensitization. Despite the increase in hole trapping by the added octanethiol to the surface of Mn-doped CdS/ZnS nanocrystals, the sensitized Mn luminescence increased by the added octanethiol and the enhancement became stronger with increasing Mn doping concentration. While the role of octanethiol as the hole trap and the enhancement of Mn luminescence may seem contradictory, the thiol-induced enhancement of Mn luminescence is possible, since thiols play dual role as the hole trap and as the facilitator of the energy transfer from the trapped exciton to Mn, in contrast to the pre-existing hole traps that inhibit the energy transfer. 2014 American Chemical Society.

published proceedings

  • The Journal of Physical Chemistry C

altmetric score

  • 0.25

author list (cited authors)

  • Maiti, S., Chen, H., Park, Y., & Son, D. H.

citation count

  • 23

complete list of authors

  • Maiti, Sourav||Chen, Hsiang-Yun||Park, Yerok||Son, Dong Hee

publication date

  • August 2014