Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics Academic Article uri icon

abstract

  • Implementation of mid-infrared (mid-IR) chip-scale microphotonic circuits is critical to advancing the science for applications such as (i) ultra-fast telecom- munications that require wider bandwidth and (ii) integrated biochemical sensors which can finger-print using infrared absorption signatures. Though substantial progress has been made in the development of light sources and detectors, a monolithic mid-IR Si-CMOS-compatible platform remains a chal- lenge. Here we experimentally demonstrate a sophisticated mid-IR micro- photonics platform adopting engineered Si-rich and low-stress silicon nitride (SiN x ) thin films where an extensive infrared transparency up to λ = 8.5 μ m is achieved. Furthermore, because of the designed low-stress property, the SiN x deposition is able to reach a thickness > 2 μ m that significantly reduces mid-IR waveguide loss to less than 0.2 dB/cm. We show directional couplers functioning over a broad infrared spectrum, thus enabling monolithic mid-IR multiplexing schemes for integrated linear and nonlinear photonics leading to sophisticated label-free sensing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

altmetric score

  • 1

author list (cited authors)

  • Lin, P. T., Singh, V., Lin, H. G., Tiwald, T., Kimerling, L. C., & Agarwal, A. M.

citation count

  • 48

publication date

  • July 2013

publisher