LowStress Silicon Nitride Platform for MidInfrared Broadband and Monolithically Integrated Microphotonics
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abstract
Implementation of mid-infrared (mid-IR) chip-scale microphotonic circuits is critical to advancing the science for applications such as (i) ultra-fast telecom- munications that require wider bandwidth and (ii) integrated biochemical sensors which can finger-print using infrared absorption signatures. Though substantial progress has been made in the development of light sources and detectors, a monolithic mid-IR Si-CMOS-compatible platform remains a chal- lenge. Here we experimentally demonstrate a sophisticated mid-IR micro- photonics platform adopting engineered Si-rich and low-stress silicon nitride (SiN x ) thin films where an extensive infrared transparency up to = 8.5 m is achieved. Furthermore, because of the designed low-stress property, the SiN x deposition is able to reach a thickness > 2 m that significantly reduces mid-IR waveguide loss to less than 0.2 dB/cm. We show directional couplers functioning over a broad infrared spectrum, thus enabling monolithic mid-IR multiplexing schemes for integrated linear and nonlinear photonics leading to sophisticated label-free sensing. 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
