Lowloss aluminium nitride thin film for midinfrared microphotonics Academic Article uri icon

abstract

  • Mid-infrared (mid-IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y-junction beam splitters are developed on thin films of CMOS-compatible sputter deposited aluminum nitride (AlN)-on-silicon. An optical loss of 0.83 dB/cm at = 2.5 m is achieved. In addition, an efficient mid-IR 50:50 beam splitter is demonstrated over 200 nm spectral bandwidth along with a <2% power difference between adjacent channels. With the inherent advantage of an ultra-wide transparent window (ultraviolent to mid-IR), our AlN mid-IR platform can enable broadband optical networks on a chip. 2014 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

published proceedings

  • Laser & Photonics Review

author list (cited authors)

  • Lin, P. T., Jung, H., Kimerling, L. C., Agarwal, A., & Tang, H. X.

citation count

  • 47

complete list of authors

  • Lin, Pao Tai||Jung, Hojoong||Kimerling, Lionel C||Agarwal, Anu||Tang, Hong X

publication date

  • March 2014

publisher