Low‐loss aluminium nitride thin film for mid‐infrared microphotonics
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Mid-infrared (mid-IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y-junction beam splitters are developed on thin films of CMOS-compatible sputter deposited aluminum nitride (AlN)-on-silicon. An optical loss of 0.83 dB/cm at λ = 2.5 μm is achieved. In addition, an efficient mid-IR 50:50 beam splitter is demonstrated over 200 nm spectral bandwidth along with a <2% power difference between adjacent channels. With the inherent advantage of an ultra-wide transparent window (ultraviolent to mid-IR), our AlN mid-IR platform can enable broadband optical networks on a chip. © 2014 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
author list (cited authors)
Lin, P. T., Jung, H., Kimerling, L. C., Agarwal, A., & Tang, H. X.