Silicon Nitride Based Mid-Infrared Microphotonics for Sensor Applications
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Integrated mid-infrared waveguides and directional couplers are demonstrated on silicon nitride (SiN) thin films by low-pressure chemical vapor deposition. The prepared SiN film has a broad spectral transparency from visible up to mid-infrared (mid-IR). The SiN waveguide shows a dominant fundamental mode with an optical loss of 2.1 dB/cm at λ = 3.7 μm. In addition, we demonstrate an efficient SiN directional coupler with an 8 dB extinction ratio upon wavelength sweep between λ = 3.55 μm to λ = 3.75 μm. With the inherent advantage of complementary metal-oxide-semiconductor (CMOS) compatibility, our SiN platform paves the way to create sophisticated photonic circuits that are desired for chip-scale mid-IR biochemical sensors. © 2013 IEEE.
author list (cited authors)
Lin, P. T., Singh, V., Kimerling, L., & Agarwal, A. M.