Silicon nitride based mid-infrared microphotonics for sensor applications Conference Paper uri icon

abstract

  • Integrated mid-infrared waveguides and directional couplers are demonstrated on silicon nitride (SiN) thin films by low-pressure chemical vapor deposition. The prepared SiN film has a broad spectral transparency from visible up to mid-infrared (mid-IR). The SiN waveguide shows a dominant fundamental mode with an optical loss of 2.1 dB/cm at = 3.7 m. In addition, we demonstrate an efficient SiN directional coupler with an 8 dB extinction ratio upon wavelength sweep between = 3.55 m to = 3.75 m. With the inherent advantage of complementary metal-oxide-semiconductor (CMOS) compatibility, our SiN platform paves the way to create sophisticated photonic circuits that are desired for chip-scale mid-IR biochemical sensors. 2013 IEEE.

name of conference

  • 2013 IEEE Sensors

published proceedings

  • 2013 IEEE SENSORS

author list (cited authors)

  • Lin, P. T., Singh, V., Kimerling, L., & Agarwal, A. M.

publication date

  • January 1, 2013 11:11 AM

publisher