Low-Stress Silicon Nitride for Mid-Infrared Microphotonics Conference Paper uri icon

abstract

  • We experimentally demonstrate a sophisticated mid-IR microphotonics platform adopting engineered Si-rich and low-stress silicon nitride (SiNx) thin films where an extensive infrared transparency up to = 8.5 m is achieved. Furthermore, because of the designed lowstress property, the SiNx deposition is able to reach a thickness > 2 m that significantly reduces mid-IR waveguide loss to less than 0.2 dB/cm. We show directional couplers functioning over a broad infrared spectrum, thus enabling monolithic mid-IR multiplexing schemes for integrated linear and nonlinear photonics leading to sophisticated label-free sensing technologies. 2014 OSA.

name of conference

  • Integrated Photonics Research, Silicon and Nanophotonics

published proceedings

  • Advanced Photonics for Communications

author list (cited authors)

  • Lin, P. T., Singh, V., Lin, H., Tiwald, T., Tan, D., Kimerling, L. C., & Agarwal, A. M.

complete list of authors

  • Lin, Pao Tai||Singh, Vivek||Lin, Hao-Yu Greg||Tiwald, Tom||Tan, Dawn TH||Kimerling, Lionel C||Agarwal, Anuradha Murthy

publication date

  • January 1, 2014 11:11 AM

publisher

  • OSA  Publisher