Low-Stress Silicon Nitride for Mid-Infrared Microphotonics
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We experimentally demonstrate a sophisticated mid-IR microphotonics platform adopting engineered Si-rich and low-stress silicon nitride (SiNx) thin films where an extensive infrared transparency up to = 8.5 m is achieved. Furthermore, because of the designed lowstress property, the SiNx deposition is able to reach a thickness > 2 m that significantly reduces mid-IR waveguide loss to less than 0.2 dB/cm. We show directional couplers functioning over a broad infrared spectrum, thus enabling monolithic mid-IR multiplexing schemes for integrated linear and nonlinear photonics leading to sophisticated label-free sensing technologies. 2014 OSA.
name of conference
Integrated Photonics Research, Silicon and Nanophotonics
Advanced Photonics for Communications
author list (cited authors)
Lin, P. T., Singh, V., Lin, H., Tiwald, T., Tan, D., Kimerling, L. C., & Agarwal, A. M.
complete list of authors
Lin, Pao Tai||Singh, Vivek||Lin, Hao-Yu Greg||Tiwald, Tom||Tan, Dawn TH||Kimerling, Lionel C||Agarwal, Anuradha Murthy