Low-stress silicon nitride for mid-infrared microphotonics Conference Paper uri icon


  • We experimentally demonstrate a sophisticated mid-IR microphotonics platform adopting engineered Si-rich and low-stress silicon nitride (SiNx) thin films where an extensive infrared transparency up to λ = 8.5 μm is achieved. Furthermore, because of the designed lowstress property, the SiNx deposition is able to reach a thickness > 2 μm that significantly reduces mid-IR waveguide loss to less than 0.2 dB/cm. We show directional couplers functioning over a broad infrared spectrum, thus enabling monolithic mid-IR multiplexing schemes for integrated linear and nonlinear photonics leading to sophisticated label-free sensing technologies. © 2014 OSA.

author list (cited authors)

  • Lin, P. T., Singh, V., Lin, H., Tiwald, T., Tan, D., Kimerling, L. C., & Agarwal, A. M.

publication date

  • January 2014