The effect of excess atomic volume on He bubble formation at fcc–bcc interfaces
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Atomistic modeling shows that Cu-Nb and Cu-V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼5 at. % and ∼0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu-Nb interfaces than in Cu-V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors. © 2010 American Institute of Physics.
author list (cited authors)
Demkowicz, M. J., Bhattacharyya, D., Usov, I., Wang, Y. Q., Nastasi, M., & Misra, A.