The effect of excess atomic volume on He bubble formation at fccbcc interfaces Academic Article

abstract

• Atomistic modeling shows that CuNb and CuV interfaces contain high excess atomic volume due to constitutional vacancy concentrations of 5at.% and 0.8at.%., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at CuNb interfaces than in CuV interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors.

authors

• Demkowicz, Michal
• Nastasi, Michael

published proceedings

• Applied Physics Letters

author list (cited authors)

• Demkowicz, M. J., Bhattacharyya, D., Usov, I., Wang, Y. Q., Nastasi, M., & Misra, A.

citation count

• 96

complete list of authors

• Demkowicz, MJ||Bhattacharyya, D||Usov, I||Wang, YQ||Nastasi, M||Misra, A

publication date

• October 2010

publisher

• AIP Publishing  Publisher

keywords

• 40 Engineering
• 4016 Materials Engineering
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1063/1.3502594

start page

• 161903

volume

• 97

issue

• 16

URL

• http://dx.doi.org/10.1063/1.3502594