Convergent beam electron diffraction measurements of relaxation in strained silicon using higher order Laue zone line splitting Academic Article

abstract

• Convergent beam electron diffraction patterns of silicon from blanket wafers of 50 nm Si0.85 Ge0.15 on Si and 126 nm Si0.79 Ge0.21 on Si and from a complementary metal-oxide-semiconductor transistor with recessed Si0.82 Ge0.18 stressors were analyzed at zone axes slightly off 110 . It was shown that certain higher order Laue zone lines split near the SiGe/Si interfaces, indicating that considerable relaxation occurred during the preparation of the transmission electron microscopy specimens. The variation in splitting as a function of distance from the interface and sample thickness is described. A simple method was used to estimate the relaxation and was compared to behavior predicted by linear elastic finite element modeling of the structures. These methods showed reasonable agreement for the structures that were examined. 2009 American Institute of Physics.

authors

• Needleman, Alan

published proceedings

• JOURNAL OF APPLIED PHYSICS

author list (cited authors)

• Diercks, D., Kaufman, M., & Needleman, A.

citation count

• 2

complete list of authors

• Diercks, David||Kaufman, Michael||Needleman, Alan

publication date

• January 2009

publisher

• AIP Publishing  Publisher

published in

• Journal of Applied Physics  Journal

keywords

• CMOS Integrated Circuits
• Elasticity
• Electron Diffraction
• Elemental Semiconductors
• Finite Element Analysis
• Ge-Si Alloys
• Internal Stresses
• Silicon
• Transmission Electron Microscopy
• X-Ray Diffraction

Digital Object Identifier (DOI)

• 10.1063/1.3093693

start page

• 063526

end page

• 063526

volume

• 105

issue

• 6