Mn-doped Ge self-assembled quantum dots via dewetting of thin films Academic Article uri icon

abstract

  • 2016 Elsevier B.V. In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO 2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO 2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

published proceedings

  • Applied Surface Science

author list (cited authors)

  • Aouassa, M., Jadli, I., Bandyopadhyay, A., Kim, S. K., Karaman, I., & Lee, J. Y.

citation count

  • 4

complete list of authors

  • Aouassa, Mansour||Jadli, Imen||Bandyopadhyay, Anup||Kim, Sung Kyu||Karaman, Ibrahim||Lee, Jeong Yong

publication date

  • March 2017