Photoluminescence of Er-implanted GaN Academic Article uri icon


  • Visible green emission has been observed from Er(Erbium)-doped GaN epilayers. Various doses of Er ions were implanted in GaN epilayers by using ion implantation. The optical properties of Er-doped GaN were analyzed by using photoluminescence (PL). Sharp emission lines due to inner 4f shell transitions for Er$^{3+}$ were observed in the PL spectrum of Er-implanted GaN. The emission spectrum consisted of two narrow green lines, 537 and 558 nm. The green emission lines were identified as Er$^{3+}$ transitions from the $^5$H$_{11/2}$ and the $^4$S$_{3/2}$ levels to the $^4$I$_{15/2}$ ground state. The stronger peaks in the 5 $ imes$ 10$^{14}$ cm$^{-2}$ sample, together with the relatively higher intensity of the Er$^{3+}$ luminescence in the lower doped sample, indicate that some damage remains in the 1 $ imes$ 10$^{15}$ cm$^{-2}$ sample.

published proceedings

  • Journal of the Korean Physical Society

author list (cited authors)

  • Son, C. S., Kim, S., Kim, Y. H., Han, I. K., Kim, Y. T., Wakahara, A., & Castaneda-Lopez, H.

complete list of authors

  • Son, CS||Kim, S||Kim, YH||Han, IK||Kim, YT||Wakahara, A||Castaneda-Lopez, H

publication date

  • January 2004