Laser and electrical current induced phase transformation of In2Se3 semiconductor thin film on Si(111) Academic Article uri icon

abstract

  • Phase transformation of thin film (∼30 nm)In 2 Se 3 /Si(111) (amorphous→crystalline) was performed by resistive annealing and the reverse transformation (crystalline→amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, binary chalcogenide semiconductor, In 2 Se 3 is of interest for non-volatile phase-change memory. Amorphous In x Se y was deposited at room temperature on Si(111) after pre-deposition of a crystalline In 2 Se 3 buffer layer (0.64 nm). Upon resistive annealing to 380°C, the film was transformed into a γ-In 2 Se 3 single crystal with its {0001} planes parallel to the Si(111) substrate and (112̄0) parallel to Si (11̄0), as evidenced by scanning tunneling microscopy, low energy electron diffraction, and X-ray diffraction. Laser annealing with 20-ns pulses (0.1 millijoules/pulse, fluence ≤ 50 mJ/cm 2 ) re-amorphized the region exposed to the laser beam, as observed with photoemission electron microscopy (PEEM). The amorphous phase in PEEM appears dark, likely due to abundant defect levels inhibiting electron emission from the amorphous In x Se y film. © 2008 Springer-Verlag.

author list (cited authors)

  • Lu, C., Shamberger, P. J., Yitamben, E. N., Beck, K. M., Joly, A. G., Olmstead, M. A., & Ohuchi, F. S.

citation count

  • 14

publication date

  • October 2008