Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane Academic Article uri icon

abstract

  • © 2016 Author(s). Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z2invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route to manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.

altmetric score

  • 0.5

author list (cited authors)

  • Qi, J., Li, X., & Qian, X.

citation count

  • 10

publication date

  • June 2016